Please use this identifier to cite or link to this item: http://dspace.pdaa.edu.ua:8080/handle/123456789/9093
Title: INFLUENCE OF STRUCTURE CHARACTERISTICS OF EPITAXIAL CDXHG1-XTE FILMS ON ELECTRICAL AND PHOTOELECTRIC PROPERTIES AFTER LASER IRRADIATION
Authors: Kopishynskaya, E P
Mozol, P E
Gnatyuk, V A
Sukach, A V
Vlasenko, A I
Lukyanenko, V I
Keywords: ANNEALING CONDITIONS
DIFFUSION
SEMICONDUCTORS
Photoconductivity
irradiation
low temperatures
Issue Date: Nov-1993
Description: Kopishynskaya, E P, Mozol, P E; Gnatyuk, V A; Sukach, A V; Vlasenko, A I; Lukyanenko, V IInfluence Of Structure Characteristics Of Epitaxial Cdxhg1-Xte Films On Electrical And Photoelectric Properties After Laser Irradiation // Semiconductors. Nov-Dec 1993. Vol(27). N.11-12. P.1002-1007.
URI: http://dspace.pdaa.edu.ua:8080/handle/123456789/9093
Appears in Collections:Фахові видання

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Semiconductors_1993_WoS.pdfMOZOL, PE ; GNATYUK, VA ; SUKACH, AV ; VLASENKO, AI ; KOPISHINSKAYA, EP; LUKYANENKO, VI. Influence Of Structure Characteristics Of Epitaxial Cdxhg1-Xte Films On Electrical And Photoelectric Properties After Laser Irradiation /Semiconductors. 1993. V(27). N.11-12. P.1002-1007.279.66 kBAdobe PDFView/Open


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