Please use this identifier to cite or link to this item: http://dspace.pdaa.edu.ua:8080/handle/123456789/4418
Title: Structure of poly(di-n-hexylsilane) in nanoporous materials
Other Titles: Structure of poly(di-n-hexylsilane) in nanoporous materials
Authors: Короткова, Ірина Валентинівна
Sakhno, T.V.
Drobit‘ko, I.K.
Sakhno, Yu.
Ostapenko, N.
Keywords: Nanoporous materials, poly(di-n-hexylsilanes), twist angle, oscillator strength, Kirkwood–Onzager constant
Issue Date: 2010
Publisher: Сhemical Physics
Series/Report no.: ;V. 374. – P.90-103
Abstract: In this work the effects of solvent polarity and conformation changing on the electronic characteristics of poly(di-n-hexylsilane) incorporated in the nanoporous materials are calculated. The dependence of energy levels of electronic-excited states of investigated compounds is analyzed as a function of the Si–Si–Si–Si twist angle and length of Si–Si and Si–C bonds. The possibility of complex formation between silicon atom of polymer and oxygen ions of nanoporous materials is shown.
URI: http://dspace.pdaa.edu.ua:8080/handle/123456789/4418
Appears in Collections:Міжнародні видання

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