Structure of poly(di-n-hexylsilane) in nanoporous materials
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Date
2010
Authors
Korotkova, I. V.
Sakhno, T. V.
Drobit‘ko, I.K.
Sakhno, Yu.
Ostapenko, N.
Короткова, Ірина Валентинівна
Сахно, Тамара Вікторівна
Journal Title
Journal ISSN
Volume Title
Publisher
Сhemical Physics
Abstract
In this work the effects of solvent polarity and conformation changing on the electronic characteristics of
poly(di-n-hexylsilane) incorporated in the nanoporous materials are calculated. The dependence of
energy levels of electronic-excited states of investigated compounds is analyzed as a function of the
Si–Si–Si–Si twist angle and length of Si–Si and Si–C bonds. The possibility of complex formation between
silicon atom of polymer and oxygen ions of nanoporous materials is shown.
Description
Keywords
Nanoporous materials, poly(di-n-hexylsilanes), twist angle, oscillator strength, Kirkwood–Onzager constant